Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device

نویسندگان

  • Sang-Gun Lee
  • Hong-Seok Choi
  • Chang-Wook Han
  • Seok-Jong Lee
  • Yoon-Heung Tak
  • Byung-Chul Ahn
چکیده

A numerical model of multi-layered organic light emitting diode (OLED) is presented in this paper. The current density-voltage (JV) model for OLED was performed by using the injection-limited current and bulk-limited current. The mobility equation was based on the field dependent model, so called “Poole-Frenkel mobility model.” The accuracy of this simulation was represented by comparing to the experimental results with a variable of EML thickness of multi-layered OLED device. There are two hetero-junction models which should be dealt with in the simulation. The Langevin recombination rate of electron and hole is also calculated through the device simulation. key words: OLED, fitting parameter, J-V characteristics, device simulation

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عنوان ژورنال:
  • IEICE Transactions

دوره 95-C  شماره 

صفحات  -

تاریخ انتشار 2012